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INTEGRATED CIRCUITS
DATA SHEET
UBA1710M Modulator for GaAs power amplifiers
Product specification Supersedes data of 1997 Feb 18 File under Integrated Circuits, IC17 1997 Oct 17
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
FEATURES * Power MOS modulators for control of GaAs power amplifier drain voltage * Power control loop amplifier and MOS driver * Voltage tripler for supply of MOS driver * Positive-to-negative DC converter for GaAs power amplifier gate biasing. APPLICATIONS * Control of GaAs power amplifiers for GSM and DCS hand-held transceivers. QUICK REFERENCE DATA SYMBOL VCC VDD ICC + IDD Tamb Note 1. For conditions, see Chapter "Characteristics". ORDERING INFORMATION PACKAGE TYPE NUMBER NAME UBA1710M SSOP20 DESCRIPTION plastic shrink small outline package; 20 leads; body width 4.4 mm PARAMETER(1) analog supply voltage digital supply voltage peak supply current in power-up mode operating ambient temperature MIN. 4.2 4.2 - -20 TYP. 4.8 4.8 12 - GENERAL DESCRIPTION
UBA1710M
The UBA1710M integrates the functions required to operate the GaAs Power Amplifiers (PAs) from the CGY20xx family which are intended for GSM and DCS applications. It includes a negative supply for PA gate biasing and most of the functions required to implement power control so that only a very few external component are required. The power control section integrates two power MOS devices for control of the PA drain voltages, an MOS driver and a feedback loop amplifier. The MOS driver is supplied from an on-chip voltage tripler.
MAX. 7.5 7.5 - +85 V V
UNIT
mA C
VERSION SOT266-1
1997 Oct 17
2
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
BLOCK DIAGRAM
UBA1710M
handbook, full pagewidth
TC1N TC1P TC2N TC2P 6 8 9 10
VP 11
STB 20
NC3N 2
NC3P 1
VN 3 Rext
VOLTAGE TRIPLER 16 15 14 13 POWER MOS 1
CLOCK
NEGATIVE DC-DC 19 CONVERTER
D1B D1A S1B S1A D2 S2
UBA1710M
BUFFER 18 17 POWER MOS 2 4 VCC 7 VDD
POWER MANAGEMENT
5 GND
12
MGG536
BUFI
Fig.1 Block diagram.
PINNING SYMBOL NC3P NC3N VN VCC GND TC1N VDD TC1P TC2N TC2P VP BUFI S1A S1B D1A D1B S2 D2 Rext STB 1997 Oct 17 PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 DESCRIPTION charge pump tank capacitor charge pump tank capacitor negative bias voltage analog supply voltage ground charge pump tank capacitor digital supply voltage charge pump tank capacitor charge pump tank capacitor charge pump tank capacitor positive tripler voltage buffer input power MOS 1 source A power MOS 1 source B power MOS 1 drain A power MOS 1 drain B power MOS 2 source power MOS 2 drain external resistance for VN standby input (active HIGH) 3 Fig.2 Pin configuration.
handbook, halfpage
NC3P NC3N VN VCC GND TC1N VDD TC1P TC2N
1 2 3 4 5
20 STB 19 Rext 18 D2 17 S2 16 D1B
UBA1710M
6 7 8 9 15 14 13 12 D1A S1B S1A BUFI
TC2P 10
MGG535
11 VP
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
FUNCTIONAL DESCRIPTION Power control section Power control for GaAs PAs from the CGY20xx family is achieved by varying the drain voltage. This is achieved with the UBA1710M by means of the two power MOS devices integrated on-chip. They enable separate control of the PA output stage from the pre-amplifier stages. They have a very low `on' resistance for low drop voltage at high RF output power. The MOS devices are driven by a buffer. The buffer amplifier, in association with power MOS, is included in a feedback loop to exhibit a high cut-off frequency (3 MHz) over the whole control dynamic range. This buffer allows fast switching of the MOS in accordance with GSM power ramping requirements. DC-DC converters One DC-DC converter is required to provide negative gate biasing to the GaAs PA.
UBA1710M
The standard value is typically -2 V, without any external resistor connected. The other one is a voltage tripler and is required to supply the MOS driver. The driver is required to raise the MOS gate voltage well above the battery voltage in order to open the MOS switches (`high side' driver). These DC-DC converters are operated at a typical frequency of 600 kHz supplied by an internal oscillator. Five external capacitors with a typical value of 0.1 F (0603 SMD) are required to operate these converters. Power management The power management disables the PA drain voltage and prevents the PA from burnout if drain voltage is supplied before the negative gate voltage is available. Standby mode An additional feature includes a standby mode, reducing the current consumption to a maximum value of 1 A.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied. SYMBOL VCC VDD VI analog supply voltage digital supply voltage DC input voltage all pins (except BUFI) pin BUFI II Ptot Tstg Tamb DC current into any signal pin total power dissipation storage temperature operating ambient temperature -0.5 -0.5 -10 - -65 -20 +9.0 +5.0 +10 0.65 +150 +85 V V mA W C C PARAMETER MIN. -0.5 -0.5 MAX. +9.0 +9.0 V V UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient VALUE 100 UNIT K/W
1997 Oct 17
4
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
CHARACTERISTICS VCC = VDD = 4.8 V; Tamb = 25 C; unless otherwise specified. SYMBOL Supplies ICC + IDD Istb RDSon1 RDSon2 fclk VPo VR(p-p) ton VNo VR(p-p) ton VIL VIH tsw peak supply current standby current power-up mode; PA on power-down mode; PA off standby mode Power MOS 1 on resistance IDS = 1.3 A IDS = 0.4 A - - - - - - 12 5 0.1 PARAMETER CONDITIONS MIN.
UBA1710M
TYP.
MAX. - - 1 - - -
UNIT
mA mA A
0.18
Power MOS 2 on resistance 0.5
Clock circuit clock frequency 600 kHz
Voltage tripler output voltage amplitude ripple (peak-to-peak value) turn-on time with INo = 250 A; Rext = 470 k with INo = 250 A; C3 = 100 nF; CN = 100 nF with IPo = 2 mA with IPo = 2 mA; C1 = C2 = 100 nF; CP = 100 nF 11.3 - - -1.5 - - - - 2 load at MOS outputs - 11.8 20 100 -1.8 2 280 12.3 - - -2.0 - - - - - V mV s
Negative DC/DC converter output voltage amplitude ripple (peak-to-peak value) turn-on time V mV s
MOS buffer amplifier LOW level input voltage HIGH level input voltage switching time from 0 to 4.5 V 1.2 3.4 1 V V s
1997 Oct 17
5
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
APPLICATION INFORMATION
UBA1710M
handbook, full pagewidth
C1
C2
CP STB 20
C3
CN
6 Vbat D1B 16 D1A 15 S1B 14 S1A 13 D2 18 S2 17
TC1N TC1P TC2N TC2P VP 10 11 8 9
NC3N NC3P VN 2 1 3 NEGATIVE DC-DC 19 Rext CONVERTER
VOLTAGE TRIPLER
CLOCK
UBA1710M
POWER MOS 1
BUFFER
POWER MANAGEMENT
POWER MOS 2 4 VCC 7 VDD 5 GND 12 BUFI
PA input PA
PA output
MGG537
Fig.3 Application diagram.
1997 Oct 17
6
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
UBA1710M
SOT266-1
D
E
A X
c y HE vM A
Z
20
11
Q A2 pin 1 index A1 (A 3) Lp L A
1
e bp
10
detail X wM
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 1.5 A1 0.15 0 A2 1.4 1.2 A3 0.25 bp 0.32 0.20 c 0.20 0.13 D (1) 6.6 6.4 E (1) 4.5 4.3 e 0.65 HE 6.6 6.2 L 1.0 Lp 0.75 0.45 Q 0.65 0.45 v 0.2 w 0.13 y 0.1 Z (1) 0.48 0.18 10 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT266-1 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION
ISSUE DATE 90-04-05 95-02-25
1997 Oct 17
7
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
UBA1710M
If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1997 Oct 17
8
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
UBA1710M
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Oct 17
9
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
NOTES
UBA1710M
1997 Oct 17
10
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
NOTES
UBA1710M
1997 Oct 17
11
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Internet: http://www.semiconductors.philips.com
SCA55
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Printed in The Netherlands
437027/1200/03/pp12
Date of release: 1997 Oct 17
Document order number:
9397 750 02955

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